Chip Integration Technology Corporation MHU04N60 Silicon N-Channel Power MOSFET Main Product Characteristics ID VDSS PD(TC=25oC) RDS(ON)Typ 4A 600V 75W 2.
0Ω ■ Features • Fast switching.
• ESD improved capability.
• Low gate charge.
(Typical Data:13nC) • Low reverse transfer capacitances.
(Typical:2.
2pF) • 100% single pulse avalanche energy test.
■ Application • Power switch circuit of adaptor and charger.
■ Outline TO-251 12 3 1.
Gate 2.
Drain 3.
Source Drain ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-251 molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed.
Gate Source Inner Equivalent principium C...

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