Part Number
|
M02N601D |
Manufacturer
|
CITC |
Description
|
Silicon N-Channel Power MOSFET |
Published
|
Mar 13, 2018 |
Detailed Description
|
M02N601D
600V N-Channel General Purpose Switching Device Applications
■ Features
• 600V, 2.0A, RDS(on) = maximum 5Ω@VGS...
|
Datasheet
|
M02N601D
|
Overview
M02N601D
600V N-Channel General Purpose Switching Device Applications
■ Features
• 600V, 2.
0A, RDS(on) = maximum 5Ω@VGS = 10V.
• 100% avalanche, EAS tested.
• Suffix "G" indicates Halogen-free part, ex.
M02N601DG.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, DPAK / TO-252.
• Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
• Weight : Approximated 0.
34 gram.
■ Outline
DPAK(TO-252)
0.
067(1.
70) 0.
051(1.
30)
0.
264(6.
70) 0.
248(6.
30) 0.
205(5.
20) 0.
189(4.
80)
D
0.
224(5.
70) 0.
209(5.
30)
GS
0.
106(2.
70) 0.
091(2.
30)
0.
031(0.
80) 0.
016(0.
40)
Drain
0.
098(2.
50) 0.
083(2.
10)
0.
098(2.
...
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