Part Number
|
MSL4435A |
Manufacturer
|
CITC |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Mar 13, 2018 |
Detailed Description
|
MSL4435A
Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET
Features:
□ Advanced high cell...
|
Datasheet
|
MSL4435A
|
Overview
MSL4435A
Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET
Features:
□ Advanced high cell density Trench technology □ Excellent CdV/dt effect decline □ Green Device Available 「 Super Low Gate Charge 「 100% EAS Guaranteed
Description:
The MSL4435A is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The MSL4435A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
BVDSS RDS(ON) ID
-30V 20mΩ -7.
5A
REF.
A B C D E F
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous D...
Similar Datasheet