Part Number
|
DS1645Y |
Manufacturer
|
Dallas Semiconducotr |
Description
|
Partitionable 1024K NV SRAM |
Published
|
Mar 15, 2018 |
Detailed Description
|
DS1645Y/AB
DS1645Y/AB Partitionable 1024K NV SRAM
FEATURES • 10 years minimum data retention in the absence of
external...
|
Datasheet
|
DS1645Y
|
Overview
DS1645Y/AB
DS1645Y/AB Partitionable 1024K NV SRAM
FEATURES • 10 years minimum data retention in the absence of
external power
• Data is automatically protected during power loss
• Directly replaces 128K x 8 volatile static RAM
• Write protects selected blocks of memory when pro-
grammed
• Unlimited write cycles
• Low–power CMOS
• Read and write access times as fast as 70 ns
• Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
• Full +10% VCC operating range (DS1645Y)
• Optional +5% VCC operating range (DS1645AB)
• Optional industrial temperature range of –40°C to
+85°C, designated IND
• JEDEC standard 32–pin DIP package
• Low Pro...
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