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Part Number
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FNK06NS04E |
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Manufacturer
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FNK |
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Description
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N-Channel Power MOSFET |
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Published
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Mar 15, 2018 |
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Detailed Description
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FNK06NS04E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK06NS04E uses advanced trench technology and ...
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Datasheet
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FNK06NS04E
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Overview
FNK06NS04E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS = 60V,ID =110A RDS(ON) 3.
3mΩ @ VGS=10V (Typ:2.
5mΩ) RDS(ON) 4.
9mΩ @ VGS=4.
5V (Typ:3.
8mΩ)
Top View
18 27 36 45
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Top View
DFN5X6 Bottom View
Application
● Power switching application ● Load switch
PIN1
Package Marking and Ordering Information
Device Marking
Device
De...
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