FNK5410D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK5410D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID = 12A RDS(ON) 138mΩ @ VGS=10V (Typ:121mΩ) RDS(ON) 152mΩ @ VGS=4.
5V (Typ:132mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-252-2L top view Package Marking and Ordering Information Device Marking D...

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