N-Channel Enhancement Mode Power MOSFET Description The FNK01N30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of other applications.
General Features ● VDSS =100V,ID =300A RDS(ON) 3.
3mΩ @ VGS=10V （Typ：2.
7mΩ） ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits FNK01N30T Schematic diagram TO...

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