FNK10P170K

FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P170K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. FNK10P170K General Features ● VDS =-100V,ID =-13A RDS(ON) 200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ●...