FNK01N17 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK01N17 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =100V,ID =170A RDS(ON) 5.
0mΩ @ VGS=10V (Typ:4.
1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Load switching ● Uninterruptible power supply To-220 Top View Package Marking and Orderin...

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