FNK4408
FNK4408 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The FNK4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching.
This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
Features
VDS (V) = 30V
ID = 12A
(VGS = 10V)
RDS(ON) 11.
3mΩ (VGS = 10V)
RDS(ON) 14.
3m Ω (VGS = 4.
5V)
SD SD SD GD
SOIC-8
D
SOP-8 top view
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive Avalanche Energy B L=0.
3mH
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