FNK6578K FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6578K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 65V,ID =78A RDS(ON) 8.
2mΩ @ VGS=10V (Typ:6.
7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply TO-252 top view ...

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