FNK6A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
D1 G1 G2 D2 General Features ● VDS = 19.
5V,ID = 5A RDS(ON) 23mΩ @ VGS=2.
5V RDS(ON) 16mΩ @ VGS=4.
5V S1 S2 Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking Device...

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