FNK10N02C FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N02C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =20V,ID =100A RDS(ON) 3.
3m Ω @ VGS=10V (Typ2.
5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Load switching ● Uninterruptible power supply TO-251 top view Package Marking and Orderi...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)