Part Number
|
FNK03N06E |
Manufacturer
|
FNK |
Description
|
N-Channel Power MOSFET |
Published
|
Mar 16, 2018 |
Detailed Description
|
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N06E uses advanced trench technology and design to prov...
|
Datasheet
|
FNK03N06E
|
Overview
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N06E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FNK03N06E
General Features
● VDS =30V,ID =80A RDS(ON) 5.
9mΩ @ VGS=10V RDS(ON) 7.
5mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
Top View
DFN5X6 Bottom View
PI...
Similar Datasheet