Part Number
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FNK02N09S |
Manufacturer
|
FNK |
Description
|
N-Channel Power MOSFET |
Published
|
Mar 18, 2018 |
Detailed Description
|
FNK02N09S
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK02N09S uses advanced trench technology to prov...
|
Datasheet
|
FNK02N09S
|
Overview
FNK02N09S
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features
● VDS = 20V,ID =15A RDS(ON) 15mΩ @ VGS=2.
5V RDS(ON) 10mΩ @ VGS=4.
5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram Marking and pin assignment
Application
● Uni-directional load switch ● Bi-directional load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device ...
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