Part Number
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FNK03N02E |
Manufacturer
|
FNK |
Description
|
N-Channel Power MOSFET |
Published
|
Mar 18, 2018 |
Detailed Description
|
FNK03N02E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02E uses advanced trench technology and des...
|
Datasheet
|
FNK03N02E
|
Overview
FNK03N02E
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =140A RDS(ON) 3.
0 mΩ @ VGS=10V RDS(ON) 4.
0mΩ @ VGS=4.
5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Top View
DFN5X6 Bottom View
Application
● Power switching application ● Hard switched and high frequency circuits ● Uni...
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