Part Number
|
K6T0808U1D |
Manufacturer
|
Samsung semiconductor |
Description
|
CMOS SRAM |
Published
|
Mar 19, 2018 |
Detailed Description
|
K6T0808V1D, K6T0808U1D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision Hi...
|
Datasheet
|
K6T0808U1D
|
Overview
K6T0808V1D, K6T0808U1D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.
0
History Initial draft
1.
0 Finalize - Add 70ns part in KM62U256D Family
- Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA
- Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA
- Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA
- Improved VIL(Min.
) : 0.
4V→0.
6V - Improved power dissipation : 0.
7W→1W
Draft Data April 1, 1997
November 12, 1997
Remark Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO, LTD.
reser...
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