P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME2303 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
ME2303/ME2303-G
FEATURES
● RDS(ON) ≦75mΩ@VGS=-10V ● RDS(ON) ≦100mΩ@VGS=-4.
5V ● Super high density cell design for extremely low RDS(ON)
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