N-Channel 40V (D-S) MOSFET
ME2318S /ME2318S-G
GENERAL DESCRIPTION
The ME2318S-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON) ≦40mΩ@VGS=10V ● RDS(ON) ≦65mΩ@VGS=4.
5V
● Super high density cell design f...