ME13N10A/ME13N10A-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME13N10A is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON) ≦145mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and ...