ME16P10/ME16P10-G
P- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME16P10 is the P-Channel logic enhancement mode power field
effect
transistors are produced using high cell density, DMOS trench
FEATURES
● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.
5V
technology.
This high density process is especially tailored to
● Super high density cell design for extremely low RDS(ON)
minimize on-state resistance.
These devices are particularly suited
● Exceptional on-resistance and maximum DC current
for low voltage application such as cellular phone and notebook
capability
computer power management and other battery powered circuits , and low in-line power loss are needed in a very sm...