Dual N-Channel 30V(D-S) MOSFET
GENERAL DESCRIPTION
The ME3920-G is the Dual N-Channel logic enhancement mode power field effect
transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6 Top View
ME3920-G
FEATURES FEATURES
● RDS(ON)≦24mΩ@ VGS =10V ● RDS(ON)≦46mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Excep...