ME6874/ME6874-G
Dual N-Channel 20-V (G-S) MOSFET
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GENERAL DESCRIPTION
The ME6874 is the Dual N-Channel logic enhancement mode power
FEATURES
● 20V/6.
0A,RDS(ON)=25mΩ@VGS=4.
5V
field effect
transistors are produced using high cell density, DMOS
● 20V/5.
2A,RDS(ON)=32mΩ@VGS=2.
5V
trench technology.
This high density process is especially tailored to
● Super high density cell design for extremely low RDS(ON)
minimize on-state resistance.
These devices are particularly suited
● Exceptional on-resistance and maximum DC current
for low voltage application such as cellular phone and notebook
capability
computer power management and other battery powered circuits where high-side switching a...