MEBSS84/ MEBSS84-G
P-Channel 50V Enhancement Mode Mosfet GMENOESRFAELT DESCRIPTION
FEATURES
The MEBSS84 is the P-Channel logic enhancement mode power
● RDS(ON)≦5Ω@VGS=-10V
field effect
transistors are produced using high cell density, DMOS
● RDS(ON)≦6Ω@VGS=-5V
trench technology.
This high density process is especially tailored to
● Super high density cell design for extremely low RDS(ON)
minimize on-state resistance.
These devices are particularly suited
● Exceptional on-resistance and maximum DC current
for low voltage application such as cellular phone and notebook
capability
computer power management and other battery powered circuits where high-side switching and low in-line...