kw ME2N7002DKW-G
Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected
GENERAL DESCRIPTION
The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-363)
FEATURES
● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.
5V ● RDS(ON)≦4.
5Ω@VGS=3V ● ESD Prot...