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MMDT2222A

NPN Silicon Multi-Chip Transistor

Description

Elektronische Bauelemente RoHS Compliant Product MMDT2222A NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.15 W (Tamp.= 25O C) .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V C 1 B2 E2 .01...

SeCoS

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