ME25P03/ME25P03-G
P- Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME25P03 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦12mΩ@VGS=-10V ● RDS(ON)≦14.
5mΩ@VGS=-4.
5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on...