N- Channel 150V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N15 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-252-3L) Top View
ME20N15 / ME20N15-G
FEATURES
● RDS(ON)≦90mΩ@VGS=10V ● RDS(ON)≦110mΩ@VGS=7V ● Super high density cell design f...