N- Channel 60V (D-S) MOSFET
ME50N06A/ME50N06A-G
GENERAL DESCRIPTION
The ME50N06A is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
PIN CONFIGURATION
(TO-252-3L) Top View
FEATURES
● RDS(ON)≦22mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Manageme...