N- Channel 80V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N08 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-252-3L) Top View
ME50N08 / ME50N08-G
FEATURES
● RDS(ON)≦8.
5mΩ@VGS=10V ● RDS(ON)≦12mΩ@VGS=6V ● Super high density cell design fo...