ME50N10AT /ME50N10AT-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME50N10AT-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦40mΩ@VGS=10V ● RDS(ON)≦60mΩ@VGS=4.
5V
● Super high density cell design for extremel...