N-Channel 100-V (D-S) MOSFET
ME50N10T/ME50N10T-G
GENERAL DESCRIPTION
The ME50N10T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦30mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
* The Ordering Information: ME50N10T (Pb-free) ME50N10T-G (Green product-Halogen free)
Absolute Maximum Rati...