ME90P03/ME90P03-G
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME90P03 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
RDS(ON) 6.
2mΩ@VGS=-20V
RDS(ON) 7.
6mΩ@VGS=-10V
Super high density cell design for extremely low RDS(ON)
Excepti...