ME90N03/ME90N03-G
N-Channel 30V(D-S) MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME90N03 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦4.
8mΩ@VGS=10V ● RDS(ON)≦9mΩ@VGS=4.
5V ● ESD Protected ● Super high density cell...