N-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME3205F is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-220F) Top View
ME3205F/ME3205F-G
FEATURES
● RDS(ON)≦6mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance a...