30V N-Channel Enhancement Mode
ME45N03T/ME45N03T-G
GENERAL DESCRIPTION
The ME45N03T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
eOrdering Information: ME45N03T (Pb-free)
ME45N03T-G (Green product-Halogen free)...