N- and P-Channel 40-V (D-S) MOSFET
ME4565A/ ME4565A-G
GENERAL DESCRIPTION
The ME4565A is the N and P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
RDS(ON) 26.
5mΩ@VGS=10V (N-Ch)
RDS(ON) 45mΩ@VGS=4.
5V (N-Ch)
RDS(ON) 44m...