N- Channel 100-V (D-S) MOSFET
ME70N10T / ME70N10T-G
GENERAL DESCRIPTION
The ME70N10T is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
● RDS(ON)≦17mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management ● DC/DC Converter ● Load Switch
* The Ordering Information: ME70N10T (Pb-free) ME70N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted...