N-Channel 40V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7642-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6 Top View
ME7642/ME7642-G
FEATURES
● RDS(ON)≦4mΩ@VGS=10V ● RDS(ON)≦5.
5mΩ@VGS=4.
5V ● Super high density cell design for extreme...