80V N-Channel Enhancement Mode
ME80N08AH/ME80N08AH-G
GENERAL DESCRIPTION
The ME80N08AH is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter
(TO-263-2L) Top View
The Ordering Information: ME80N08AH (Pb-free) ME80N08AH-G (Green product-Halogen free)
Absolute Maxim...