ME80N75AF / ME80N75AF-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME80N75AF is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC curren...