Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4970 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4970/ME4970-G
FEATURES
● RDS(ON)≦16mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.
5V ● Super high density cell design f...