ME6986ED/ME6986ED-G
Dual N-Channel 20V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME6986ED is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TSSOP-8) Top View
FEATURES
● RDS(ON)≦13.
5mΩ@VGS=4.
5V ● RDS(ON)≦18mΩ@VGS=2.
5V ● Supe...