N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7114S is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3.
3x3.
3) Top View
ME7114S-G
FEATURES
● RDS(ON)≦7mΩ@VGS=10V ● RDS(ON)≦10.
5mΩ@VGS=4.
5V ● Super high density cell desi...