N-Channel 30V (D-S) MOSFET
ME7814S/ME7814S-G
GENERAL DESCRIPTION
The ME7814S-G is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.
3x3.
3) Top View
FEATURES
● RDS(ON)≦3.
6mΩ@VGS=10V ● RDS(ON)≦5.
1mΩ@VGS=4.
5V
● Super high density cell...