P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME7835S P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.
3x3.
3) Top View
ME7835S-G
FEATURES
● RDS(ON) ≦18mΩ@VGS=-10V ● RDS(ON) ≦36mΩ@VGS=-4.
5V
APPLICATIONS
● Power Management in Note bo...