FNK10N25S FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N25S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
G D D G General Features ● VDS = 20V,Id = 8A RDS(ON) 22mΩ @ VGS=2.
5V RDS(ON) 16m Ω @ VGS=4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package SS Schematic diagram Application ●Battery protection ●Load switch ●Power management TSSOP-8 top view Marking and pin assignment Package Marking and Ordering Information Device Marking Devi...

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