N-Channel Enhancement Mode Power MOSFET Description The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =8A R DS(ON) 17mΩ @ VGS=2.
5V R DS(ON) 13mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Uni-directional load switch ● Bi-directional load switch FNK2012E Schematic diagram TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package FNK...

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