FNK N-Channel Enhancement Mode Power MOSFET FNK06N02D General Description The FNK06N02D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=4.
5V) RDS(ON) (at VGS=4.
5V) RDS(ON) (at VGS=2.
5V) 20V 50A 5.
4mΩ 7.
2mΩ ● High Power and current handing capability ● Lead free product is acquired Application ●Battery Switch ●Load switch ●Power management Schematic diagram TO-252-2L top view Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain...

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