FNK N-Channel Enhancement Mode Power MOSFET FNK11N03D Description The FNK11N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =30V,ID =110A RDS(ON) 3.
6mΩ @ VGS=10V (Typ: 2.
7mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-252-2L top view Package Marking And Ordering Information Devic...

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